TUBESTAR
Batch Type Horizontal Tube Furnace

The TUBESTAR solution is a flexible & compact batch-type, single or multi-chambers horizontal furnace offered by ECM Greentech. Key characteristics of this equipment are: High precision semiconductor processing combined with industrial process control, integration modularity, and a user-friendly interface. Each populated chamber can be independently configured and operated in a wide range of atmospheric, sub-atmospheric or low pressure processes. The TUBESTAR furnace can also handle multiple gases and liquid precursors with a temperature range from 200 up to 1300°C. Its modular design allows to meet a large range of clean thermal treatments for universities, research laboratories, and pilot production facilities.
TS150-XT: up to 150mm wafer size
TS200-XT: up to 200mm wafer size

X = chamber/level qty from 1 to 4

Technical Sheet

Substrate dimensions	Up to 200 mm
Substrate material	Si, SiC, GaN, Sapphire, ceramic, quartz, metal
Features	1 to 4 independent process chambers Chamber configurable for 150mm or 200mm wafer size Configurable for 25/50 or 50/100 wafers per chamber Modular and flexible with tiny footprint Excellent process precision and repeatability High performance and life-time process technology Low power consumption and low carbon print Over 30 years process expertise 3 zones resistive heaters up to 1300°C Up to 9 thermocouples with Digital Direct Temperature Control (DDTC) Temperature regulation modes Internal, External, Profile, Cascade & Feedforward Atmospheric, Sub-Atmospheric or low pressure capabilities upon process Gas Cabinet for up to 13 gases Liquid source precursor Cabinet and vaporisation Industrial Process PLC and Windows® based Mycore supervision
Options	Process related pump package Laminar Flow class 1 (vertical or horizontal) Furnace roof top with exhaust ducts or water cooled heat exchanger SECS/GEM compliant with SEMI E30, E37 Dedicated additional process features upon process requirements Manual or automatic boat loading
Integration	Cassette to Cassette Automation with Robotic and Wafer Transfer System

Anneal under neutral gases (N2, Ar)
Dry Oxidation with N2/O2, N2O
Wet Oxidation with pyrogenic H2/O2 ex-torch
Wet Oxidation with DI water bubbler
Wet Oxidation with Purified DI water by steamer
Boron or phosphorous doping with liquid, solid or gas source
High temperature diffusion of P or N junctions
Low temperature Annealing, Sinter, Alloy

LYDOP phosphorous doping with POCl3 or PH3
LYDOP boron doping with BCl3
LYTOX Dry or Wet High Precision Oxides
LYSINTER forming gas Anneal from 0% up to 100% H2

LPCVD Nitride : Stochiometric, Low-Stress, Oxynitride
LPCVD Poly : Flat, Low-Stress, Intrinsic or in-situ Doped P/N
LPCVD a-Si : Amorphous Intrinsic or in-situ Doped
LPCVD TEOS : Undoped, PSG/BSG/BPSG, Conformal
LPCVD MTO & SIPOS
LPCVD LTO : Undoped, PSG/BSG/BPSG
LPCVD HTO
LPCVD 3C-SiC
LPCVD Si on Sapphire
LPCVD Tungsten
LPCVD Graphene
LPCVD Multi-processes
Thermal ALD options

VAR SERIES
BATCH TYPE VERTICAL TUBE FURNACE