SiC Crystal growth furnace, offered by ECM Greentech, is an high temperature equipment solution up to 2500°C in order to produce SiC ingot up to 8’’. This furnace comes in a variety of sizes, heating power elements and current with the capability of producing up to 8’’ SiC boules under controlled partial pressure of Nitrogen and/or inert gas. The heating inductive technology can reach a working temperature up to 2500°C. Our systems are equipped with the precise and stable Cyberstar pulling head, having a conversion rate of 0.01 to 100 mm/h translation speed. Due to the use of an intuitive and user friendly Cyberstar pulling software, full monitoring and control of the growth is made possible. Choosing ECM Greentech is to make sure to benefit from the skills and expertise of a larger french industrial group, specialized in vacuum heat treatment equipments and crystal growth expertise thanks to the former Cyberstar company.
PVT furnace technical features :
| Effective dimensions | Equipment available for 4’’ / 6’’ / 8’’ ingot |
| Materials | SiC |
| Features | Cyberstar precise pulling head Induction heating Equipped with single quartz tube (or double quartz tube) Chamber capabilities for secondary vacuum Operating security loop system Fully computerized heating process Water cooled (working temperature in the reactor up to 2500 °C) Temperature control : ± 1 °C Precise regulation of pressure from 1 to 1000 mbar Power control : ± 0.1 % |
| Options | Movable platform : Slow or fast translation speed Design available for academic research or mass production Weighting system can be integrated |
| Integration | Possibility of Automation and software controled growth process |
