DF-Series are ECM Greentech batch-type, horizontal tubular furnaces for mass-production. Key characteristics of this furnace are: precision semiconductor processing combined with industrial process control, integration modularity, and a user-friendly interface. Each populated chamber can be independently configured and operated in a large range of atmospheric, sub-atmospheric or low pressure processes. The DF furnaces can also handle multiple gases and liquid precursors with a temperature range from 200 to 1300°C. Its modular design allows to meet a large range of clean thermal treatment for industrial facilities.

  • DF5303-S150: 3 Tubes – up to 150mm wafers size
  • DF5304-S150: 4 Tubes – up to 150mm wafers size
  • DF6303-S200: 3 Tubes – up to 200mm wafer size
  • DF6304-S200: 4 Tubes – up to 200mm wafer size

Technical Sheet

Substrate dimensions Up to 200 mm
Substrate material Si, SiC, GaN, Sapphire, ceramic, quartz, metal
Features 1 to 4 independent process chambers
Reactor configuration for 100mm, 150mm or 200mm wafer size
Up to 400 wafers (Atmospheric), 300 wafers (LYDOP/LYTOX), 200 wafers (LPCVD)
Mass production horizontal furnace
Excellent process precision and repeatability
High performances and lifetime process technology
Low power consumption and low carbon footprint
Over 35 years of process expertise
5 zones resistive heaters up to 1300°C
Up to 15 thermocouples with Digital Direct Temperature Control (DDTC)
Temperature regulation modes Internal, External, Profile, Cascade & Feedforward
Atmospheric, Reduced or Low pressure capabilities upon process needs
Gas Cabinet for up to 8 gases
Liquid source precursor Cabinet and vaporization
Industrial Process PLC and Windows® based Mycore supervision
Options Process related pump package
Laminar Flow class 1 (vertical or horizontal)
Furnace roof top with exhaust ducts or water cooled heat exchanger
SECS/GEM compliant with SEMI E30, E37
Dedicated additional process features upon process requirements
Manual or automatic boat loading
Integration Cassette to Cassette Automation with Robotic and Wafer Transfer System (LINK TO THE ROBOTICS / AUTOMATION IN SERVICE)
Anneal under neutral gases (N2, Ar)
Dry oxydation with N2/O2, N2O
Wet Oxidation with Pyrogenic H2/O2 ex-torch
Wet Oxidation with DI water bubbler
Wet Oxidation with Purified DI water by steamer
Boron or phosphorous doping with liquid, solid or gas source
High temperature diffusion of P or N junctions
Low temperature Annealing, Sinter, Alloy
LYDOP phosphorous doping with POCl3 or PH3 (SAPCVD)
LYDOP boron doping with BCl3 (SAPCVD)
LYSINTER forming gas Anneal from 0% up to 100% H2
LYTOX dry or wet high precision oxides
LPCVD Nitride: Stochiometric, Low-Stress, Oxynitrides
LPCVD Poly : Flat, Low-Stress, Intrinsic or in-situ Doped P/N
LPCVD a-Si: Amorphous Intrinsic or in-situ Doped
LPCVD TEOS : Undoped, PSG/BSG/BPSG, Conformal
LPCVD MTO & SiPOS
LPCVD LTO : Undoped, PSG/BSG/BPSG
LPCVD HTO
LPCVD 3C-SiC
LPCVD Si on Sapphire
LPCVD Tungsten
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DF SERIES
Batch Type Horizontal Tube Furnace