ECM Greentech offers crystal growth equipment that capable of growing sapphire crystals using the Edge Defined Film Fed Growth (EFG) method. The standard heating method is inductive; however, it can also be equipped with Cyberstar resistive heating elements. Several sizes are available to meet laboratories requirements as well as R&D centers.
Technical Sheet
Effective dimensions | 400*60*6 (L*W*T) 600*150*6 (L*W*T) |
Features | Various Crystal sizes up to 60 kg Cyberstrar precise pulling head Equipped with quartz (or sapphire) window view ports Resistive or inductive heating Operating security loop system Water cooled (working temperature in the reactor up to 2600 °C) Fully computerized heating process Chamber capabilities for primary and secondary vacuum |
Options | Weighing device up to 60 kg Added crucible translation ( manual or automatic) Precise pressure regulation system Controlled mass flow of diffrent atmosphere gases |
Integration | Possibility of Automation |