ECM Greentech offers crystal growth equipment that capable of growing sapphire crystals using the Edge Defined Film Fed Growth (EFG) method. The standard heating method is inductive; however, it can also be equipped with Cyberstar resistive heating elements. Several sizes are available to meet laboratories requirements as well as R&D centers.

Technical Sheet

Effective dimensions 400*60*6 (L*W*T)
600*150*6 (L*W*T)
Features Various Crystal sizes up to 60 kg
Cyberstrar precise pulling head
Equipped with quartz (or sapphire) window view ports
Resistive or inductive heating
Operating security loop system
Water cooled (working temperature in the reactor up to 2600 °C)
Fully computerized heating process
Chamber capabilities for primary and secondary vacuum
Options Weighing device up to 60 kg
Added crucible translation ( manual or automatic)
Precise pressure regulation system
Controlled mass flow of diffrent atmosphere gases
Integration Possibility of Automation
efg

Edge-defined Film-fed Growth (EFG)

mpd

Micro Pulling Down (MPD)
Micro Pulling Down Crystal Growth Furnace

Laser Heated Pedestal Growth (LHPG)

MF3000-1

MF3000 XENON LAMP BASED OPTICAL VERTICAL FLOATING ZONE CRYSTAL GROWTH SYSTEM

MF2000

MF2400 HALLOGEN LAMP BASED OPTICAL HORIZONTAL FLOATING ZONE CRYSTAL GROWTH SYSTEM

Vertical 3 zone Liquid Phase Epitaxy (VLPE)

LPE-furnace

Liquid Phase Epitaxy (LPE)
Application Crystal growth

BRIDGMAN

Bridgman
High temperature Bridgman furnace

tetra-arc-furnace

Tetra Arc
High temperature melting and crystal growth Arc furnace

kyropoulos2

Kyropoulos
Kyropoulos crystal growth machine

CZ-puller

Czochralski puller (CZ)
Czochralski single crystal puller

pv20

PV 20
Directional solidification furnace G1

ECM-ECM_PV80

PV80
Directional solidification furnace G2

ECM PV 600 detoure

PV600
Directional solidification furnace G6

PV1300

PV1300
Directional solidification furnace G8