Semco DF-Series are ECM Greentech batch-type, horizontal tubular furnaces for mass-production. Key characteristics of this furnace line are: precision semiconductor processing combined with industrial process control, integration modularity, and a user-friendly interface. Each populated chamber can be independently configured and operated in a large range of atmospheric, sub-atmospheric or low pressure processes. The DF furnaces can also handle multiple gases and liquid precursors with a temperature range from 200 to 1300°C. Its modular design allows to meet a large range of clean thermal treatment for industrial facilities.
DF5204-S150: up to 150mm wafers size
DF6303-S200 & DF6304-S200: up to200mm wafer size
Technical Sheet
| Substrate dimensions | Up to 200 mm |
| Substrate material | Si, SiC, GaN, Sapphire, ceramic, quartz, metal |
| Features | 1 to 4 independent process chambers Chamber configurable for 150mm or 200mm wafer size Up to 400 wafers (Atmospheric), 300 wafers (LYDOP/LYTOX), 200 wafers (LPCVD) Mass production horizontal furnace Excelent process precision and repeatibility High performance and life-time process technology Low power consumption and low carbon print Over 30 years process expertise 3 or 5 zones resistive heaters up to 1300°C External & internal thermocouple Digital Direct Temperature Control (DDTC) Atmospheric, reduced or low pressure capabilities upon process Gas Cabinet for up to 8 gases Liquid source precursor Cabinet and vaporisation Industrial Process PLC and Windows® based Mycore supervision Compatible with 156X square substrate (PV) |
| Options | Process related pump package Laminar Flow class 1 (vertical or horizontal) Furnace roof top with exhaust ducts or water cooled heat exchanger SECS/GEM compliant with SEMI E30, E37 up to customer requirements Dedicated additional process features upon process configuration Manual or automatic boat loading |
| Integration | Cassette to Cassette Automation with Robitic and Wafer Transfer System (LINK TO THE ROBOTICS / AUTOMATION IN SERVICE) |
| Dry oxydation with O2 |
| Pyrolithic oxidation with H2/O2 torch |
| Wet Oxide with Pure DI water steamer |
| Boron or phosphorous dope with liquid, solid or gas source |
| High temperature diffusion of P or P junction |
| Low temperature Annealing, Sinter, Alloy |
| LYDOP phosphorous dope with POCl3 or PH3 |
| LYDOP boron dope with BCl3 |
| LYSINTER forming gas to 100% H2 annealing |
| LYTOX dry or wet extreme precision oxides |
| LPCVD Nitride: Stochiometric, Low-Stress, Oxynitride |
| LPCVD Poly : Flat, Intrinsic or p/n-doped |
| LPCVD a-Si: Amorphous, Low-Stress |
| LPCVD SiPOS & MTO |
| LPCVD 3C-SiC |
| LPCVD Si on Sapphire |
| LPCVD TEOS : Undoped, PSG/BPSG, Conformal |
| LPCVD LTO : Undoped, PSG/BPSG |
| LPCVD HTO |
| LPCVD Tungsten |
